A semiconductor with a record band gap has been created American scientists have reported the creation of a new semiconductor with the widest band gap of all semiconductors used in electronic devices - more than seven electron volts (eV). It is based on aluminum gallium oxide doped with silicon and grown on a sapphire substrate. This achievement may help improve the efficiency of electric vehicles, power grids and data centers.

A semiconductor with a record band gap has been created American scientists have reported the creation of a new semiconductor with the widest band gap of all semiconductors used in electronic devices - more than seven electron volts (eV). It is based on aluminum gallium oxide doped with silicon and grown on a sapphire substrate. This achievement may help improve the efficiency of electric vehicles, power grids and data centers.